Learning outcomes

Aim of the course is to give knowledge of the physics of semiconductor devices (p-n junction, MOSFET, CMOS; BJT) and related logic gates. The student will be able to compare various logic families in terms of their physical characteristics and performances.

Program

Recall of Classical and Atomic Physics: work and energy, electric field, potential and potential energy, electric current, Ohm's law, linear circuits, resistivity and temperature dependence in metals and semiconductors, Bohr atom, table of elements

Crystal structure and electric conduction in metals and semiconductors: electron gas model of metals, conduction current in metals; covalent bond in semiconductors and the concept of hole, doped semiconductors, band theory, conduction and diffusion current in semiconductors

p-n junction: polarized and non polarized junction, I-V characteristics in direct and reverse polarization for Si and Ge, breakdown, junction diode, Zener diodes, OR/AND gates with diodes, commutation time

FET transistors: enrichment and depletion MOSFET, NMOS and PMOS. MOSFET inverters, CMOS, noise margins and commutation times

BJT transistors and RTL inverter: common emitter configuration, RTL inverter, noise margins, commutation times

Elementary digital circuits: basic gates in MOS and bipolar technologies: NOR and NAND MOS, NOR and NAND CMOS, NAND DTL, NAND HTL, NAND TTL; OR/NOR ECL

Comparison of logic families: propagation delay, power dissipation, noise margins, fan-out

Laboratory activities: logic gates study and characterization by Spice

Examination Methods

Oral

Teaching materials e documents

•   Dispense laboratorio   (zip, it, 1683 KB, 21/11/11)
•   Dispense teoria   (zip, it, 7214 KB, 21/11/11)
•   Errata corrige teoria   (rtf, it, 4 KB, 21/11/11)