The Physics of Integrated Devices
Scientific Disciplinary Sector (SSD)
FIS/01 - EXPERIMENTAL PHYSICS
I semestre dal Oct 1, 2013 al Jan 31, 2014.
Aim of the course is to give knowledge of the physics of semiconductor devices (p-n junction, BJT, JFET, MOSFET, CMOS) and related logic gates. The student will be able to compare various practical devices in terms of their physical characteristics and performances.
Recall of Classical and Atomic Physics: work and energy, electric field, potential and potential energy, electric current, Ohm's law, linear circuits, resistivity and temperature dependence in metals and semiconductors, Bohr atom, table of elements
Crystal structure and electric conduction in metals and semiconductors: electron gas model of metals, conduction current in metals; covalent bond in semiconductors and the concept of hole, doped semiconductors, band theory, conduction and diffusion current in semiconductors
p-n junction: polarized and non polarized junction, I-V characteristics in direct and reverse polarization for Si and Ge, breakdown, junction diode, Zener diodes, OR/AND gates with diodes, commutation time
BJT transistors : common emitter configuration and common base configuration, RTL inverter, noise margins, commutation times
JFET transistors: enrichment and depletion MOSFET, NMOS and PMOS. MOSFET inverters, CMOS, noise margins and commutation times
Elementary digital circuits: basic gates in MOS and bipolar technologies: NOR and NAND MOS, NOR and NAND CMOS, NAND DTL, NAND HTL, NAND TTL; OR/NOR ECL
Comparison of logic families: propagation delay, power dissipation, noise margins, fan-out
Laboratory activities: logic gates study and characterization by Micro-cap
Oral presentation and written research work on one of the topics presented during the course.