The course aims to educate students on advanced theoretical and technological aspects of integrated electronic devices and sensors of signals and data. The main objective of the course is therefore to provide the principles of physics of integrated devices, knowledge of the technology of optical, thermoelectric, magnetic and gas sensors, their interface with advanced software applications as well as the methods of use of the same in the environment robotic and manufacturing. Upon completion of the course, the student would demonstrate the acquisition of the fundamental knowledge of the technology, functioning and applications of integrated electronic devices and sensors. This knowledge will allow the student to: i) understand the behavior of integrated electronic devices; ii) select and apply sensors for the acquisition of signals and data in a robotic and manufacturing environment; iii) interface sensors to signal and data processing applications. After this course, the student will have acquired the ability to independently assess the advantages and disadvantages of different technological and design solutions in the field of integrated electronic devices and signal and data acquisition sensors. In addition, he will be able to: i) carry out a group laboratory project and present its results by motivating the choices made with language appropriateness: ii) autonomously continue the study and research in the field of integrated electronic devices and acquisition of signals and data, addressing advanced issues both in the industrial and scientific fields.
In order to properly follow the lectures it is strongly recommended to have already acquired knowledge on classical physics (laws of motion, work, energy, electric field, electric potential).
The course consists of theoretical section and two different experimental sections in the lab (simulation and hardware).
Elements of Classical Physics and Atomic Physics: work and energy, electric field and potential, electric current, Ohm's law, linear circuits resistivity and temperature dependence in metals and semiconductors, the Bohr model, the periodic table of the elements
Crystal structure and electrical properties of metals, semiconductors and doped semiconductors: gas model of electrons in metals as a link model in semiconductors, concept of gap, doped semiconductors, nods to the band theory, conduction current and dissemination
P-n junction: non-polarized and polarized junction, ddp contact, voltage-current characteristic in forward and reverse bias, junction diode, Zener diode, OR / AND gates to diodes, switching times
Bipolar junction transistor BJT, input curves and in common emitter configuration output, common base, inverter, transfer rates characteristic and noise margins, switching times
Transitor in the field of JFET and MOSFET effect, manufacturing techniques, output and transfer curves, MOSFET and CMOS inverters, transfer characteristics, noise margins, switching times
Elementary digital circuits in MOS technology, CMOS, bipolar, ECL: NOR and NAND MOSFET and CMOS, NAND DTL, HTL, TTL, OR / NOR ECL
Comparison of logic families: propagation delay, power dissipation, fan-out, noise margins
-Laboratory (software) with circuit simulation with Micro Cap (12 hours).
-Laboratory (hardware) with circuit fabrication on pre-prepared electronic cards (12 hours).
The complete teaching material is available on the e-learning portal.
The final test will be an oral exams on the topics covered in the lectures.
Specifically a small report (thesis) on a specific topic developed in the course, for example a particular device and/or sensor. The student will present his work by an oral presentation (for example in power point) where questions on the basic physics principles of semiconductors and of electronic devices might arise.